Richard Hendrix Appointed Chair of the Board Executive Steering Committee Formed to Advance Growth Strategy TORRANCE, Calif., April 24, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NASDAQ:NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, today announced actions by its board of directors to advance the company's growth strategy. These corporate governance enhancements reflect the board's ongoi ...

Navitas Semiconductor to Report Q1 2025 Financial Results on Monday, May 5th, 2025 Navitas Semiconductor (Nasdaq: NVTS) today announced that it will report first quarter 2025 financial results after the market close on Monday, May 5th, 2025. Management will host a conference call and live webcast to present the company's financial results and answer questions from the financial analyst community at 2:00 p.m. Pacific / 5:00 p.m. Eastern that same evening. TORRANCE, Calif., April 21, 2025 (GLOBE NEWSWIRE) ...

Advanced low-cost epoxy-resin potting technology enables 5x lower thermal resistance shift for extended system lifetime Navitas’ Latest SiCPAK™ Power Modules Set a New Standard for Unparalleled Reliability & Efficient High-Temperature Performance Advanced low-cost epoxy-resin potting technology enables 5x lower thermal resistance shift for extended system lifetime. TORRANCE, Calif., April 17, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semicon ...

文章核心观点 公司发布采用环氧树脂灌封技术的最新SiCPAK™功率模块，适用于多种高功率环境，具有高可靠性和高温性能优势 [1] 产品特点 - 采用先进环氧树脂灌封技术，能防止湿气侵入，减少功率和温度变化导致的性能下降，可耐受高湿度环境并实现稳定热性能 [2] - 经过1000次热冲击测试（-40°C至+125°C），热阻增加比传统硅胶填充盒式模块低5倍，且在隔离测试中能保持可接受的隔离水平 [3] - 基于超20年碳化硅创新领导地位的GeneSiC™“沟槽辅助平面碳化硅MOSFET技术”，可实现行业领先的温度性能，降低20%的损耗，运行更凉爽，具备出色的耐用性 [4] - “沟槽辅助平面”技术使RDS(ON)随温度升高的增幅极低，在更宽的工作范围内实现最低功率损耗，在高温电路运行时比竞争对手的RDS(ON)低20% [5] - 所有GeneSiC™碳化硅MOSFET具有最高公布的100%测试雪崩能力，短路耐受能量提高30%，阈值电压分布紧密，便于并联 [5] 产品规格 - 1200V SiCPAK™功率模块内置NTC热敏电阻，有4.6mΩ至18.5mΩ的额定值，提供半桥、全桥和3L - T - NPC电路配置 [6] - 与行业标准压接式模块引脚兼容，还可选预涂热界面材料以简化组装 [6] 产品供应 - 模块已发布并可立即投入大规模生产，数据手册可在指定网址查看 [7] 公司介绍 - 公司是唯一的纯下一代功率半导体公司，2014年成立，拥有10年功率创新历史 [8] - GaNFast™功率IC集成氮化镓功率和驱动以及控制、传感和保护功能，可实现更快充电、更高功率密度和更大节能效果 [8] - 互补的GeneSiC™功率器件是优化的高功率、高压和高可靠性碳化硅解决方案 [8] - 专注市场包括人工智能数据中心、电动汽车、太阳能、储能、家电/工业、移动和消费领域 [8] - 拥有超300项已授权或待授权专利，提供行业首个也是唯一的20年GaNFast质保，是全球首家获得碳中和认证的半导体公司 [8]

文章核心观点 - 纳微半导体宣布其高功率GaNSafe™ ICs获得汽车资格认证，展示了氮化镓在汽车市场的新突破，同时其相关产品在效率、功率密度等方面有优势，推动氮化镓成为电动汽车电源系统的首选技术 [3][1][9] 公司产品情况 - 高功率GaNSafe 4代系列集成控制、驱动、传感和关键保护功能，具备短路保护、ESD保护等特性，通过4引脚控制，无需VCC引脚 [4] - 2025年3月推出世界首个量产的650V双向GaNFast ICs与IsoFast驱动器，可使下一代单级车载充电器实现高效双向充电 [7] 产品认证情况 - 公司高功率GaNSafe™ ICs获得AEC - Q100和AEC - Q101汽车资格认证，确保分立功率FET级和组合IC解决方案符合严格规格 [3][5] - 为支持认证，公司创建综合可靠性报告，分析超7年生产和现场数据，展示产品可靠性和耐用性提升 [6] 产品应用效果 - 领先的电动汽车和太阳能微型逆变器制造商已开始采用单级BDS转换器，可实现高达10%的成本节省、20%的能源节省和高达50%的尺寸减小 [8] 公司发展成果 - 公司已发货超2.5亿个单位，现场设备运行超2万亿小时，累计现场故障率接近十亿分之一百 [9][13] 公司简介 - 纳微半导体是唯一纯专注于下一代功率半导体的公司，2014年成立，拥有GaNFast™功率IC和GeneSiC™功率器件，聚焦多个市场，拥有超300项专利，提供20年GaNFast保修，是世界首个获得碳中和认证的半导体公司 [10]

GaNSense™ technology boosts 8x power for AI data centers, telecommunications, and industrial equipment in ultra-high power density DC-DC converters Navitas Partners with Great Wall Power for Next Generation 400V-DC Power Architecture for AI Data Centers GaNSense™ technology boosts 8x power for AI data centers, telecommunications, and industrial equipment in ultra-high power density DC-DC converters. TORRANCE, Calif., April 09, 2025 (GLOBE NEWSWIRE) -- In a release issued under the headline "Navitas Partn ...

Joint lab collaboration expected to accelerate GaN & SiC adoption in AI data centers, EV, solar and energy storage systems (ESS) Navitas & GigaDevice Announce Partnership to Combine Power & Control for Next-Gen, High-Frequency, High-Efficiency, & High-Density Power Platforms Joint lab collaboration expected to accelerate GaN & SiC adoption in AI data centers, EV, solar and energy storage systems (ESS) TORRANCE, Calif., April 09, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure ...

TORRANCE, Calif., April 09, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NASDAQ:NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced a new strategic partnership with GigaDevice, a world-leader in microcontrollers (MCUs) and flash memory, to create a joint-lab for integrating and tailoring Navitas' GaNFast™ ICs & GigaDevice's Microcontrollers, targeting AI data centers, EVs, Solar, ...

Navitas Semiconductor’s (NVTS) GaNSense power ICs are being used in China-based switching power supplies solution provider Greatwall Power’s latest 2.5kW ultra-high power density DC-DC converter for AI data centers.Navitas’ NV6169 GaN solution delivers 50% more power than previous versions to GreatWall’s latest DC-DC converter. This integration supports applications that demand high efficiency and power density, ensuring optimal performance, even in the most demanding environments. This innovation not only ...

TORRANCE, Calif., April 03, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NASDAQ:NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its GaNSense power ICs will power GreatWall's latest 2.5kW ultra-high power density DC-DC converter for AI data centers. The rapid development of AI has imposed higher requirements for computing power on data centers. To accommodate more GPUs for comp ...